Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V

These high ruggedness devices, MRF1K50N and MRF1K50GN, are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range us • High drain-source avalanche energy absorption capability\n• Unmatched input and output allowing wide frequency range utilization\n• Device can be used single-ended or in a push-pull configuration\n• Characterized from 30 to 50 V for ease of use\n• Suitable for linear application\n• Integrated ESD ;

恩XP

High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs

文件：827.29 Kbytes 页数：21 Pages

恩XP

Surge Capable Thick Film Non Inductive

文件：106.02 Kbytes 页数：1 Pages

OHMITE

Attenuator, Fused Fiber

文件：116.63 Kbytes 页数：4 Pages

JDSU

捷迪讯

Programmable Logic Device Family

文件：1.2041 Mbytes 页数：86 Pages

Altera

阿尔特

1. Enhanced Configuration Devices (EPC4, EPC8, and EPC16) Data Sheet

The Altera enhanced configuration device is a single-device, high-speed, advanced configuration solution for very high-density FPGAs. The core of an enhanced configuration device is divided into two major blocks, a configuration controller and a flash memory. The flash memory is used to store conf

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Altera

阿尔特