RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

文件：542.12 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

文件：182.18 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

文件：182.18 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

文件：542.12 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

文件：383.37 Kbytes 页数：8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：383.37 Kbytes 页数：8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：383.37 Kbytes 页数：8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2110-2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

Overview The MRF21010LR1 and MRF21010LSR1 are designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.\nArchived content is no lon \n•Typical W–CDMA Performance: –45 dBc ACPR, 2170 MHz, 28 Volts,\n5 MHz Offset/4.096 MHz BW, 15 DTCH\nOutput Power — 2.1 Watts\n\tPower Gain — 13.5 dB\n\tEfficiency — 21%\n\n•Capable of Handling 10:1 VSWR @ 28 Vdc, 2140 MHz, 10 Watts CW Output Power\n\n•High Gain, High Efficiency and High Linear;

恩XP

RF Power Field Effect Transistors

NJS

新泽西半导体