MRF21030LR3中文资料2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET数据手册恩XP规格书

描述 Description

Overview The MRF21030LR3 is designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
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特性 Features

•Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts
   Output Power — 3.5 Watts
   Power Gain — 14 dB
   Efficiency — 15%

•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW Output Power

•High Gain, High Efficiency and High Linearity

•Integrated ESD Protection

•Designed for Maximum Gain and Insertion Phase Flatness

•Excellent Thermal Stability

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Low Gold Plating Thickness on Leads, 40µ″ Nominal.

•RoHS Compliant

•In Tape and Reel. R3 suffix = 250 Units per 32 mm, 13 inch Reel.