MRF21060L中文资料2110-2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview MRF21060LR3, MRF21060LSR3 removed from active portfolio. View replacement parts via Part Number Search.

特性 Features

•Typical 2–carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 6 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain: 12.5 dB
\tDrain Efficiency: 15%
\tACPR @ 5 MHz Offset: –47 dBc in 3.84 MHz Channel Bandwidth

•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW Output Power

•Internally Matched for Ease of Use

•High Gain, High Efficiency and High Linearity

•Integrated ESD Protection

•Designed for Maximum Gain and Insertion Phase Flatness

•Excellent Thermal Stability

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.