MRF21120S中文资料2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFET数据手册恩XP规格书

描述 Description

Overview MRF21120S removed from active portfolio.

特性 Features

•W–CDMA Performance @ –45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch
Output Power — 14 Watts (Avg.)
Power Gain — 11.5 dB
Efficiency — 16%
•Internally Matched, Controlled Q, for Ease of Use
•High Gain, High Efficiency, and High Linearity
•Integrated ESD Protection
•Designed for Maximum Gain and Insertion Phase Flatness
•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2170 MHz, 120 Watts (CW) Output Power
•Excellent Thermal Stability
•Characterized with Series Equivalent Large–Signal Impedance Parameters