NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF238is Designed for 13.6 V FM Large-Signal Amplifier Applications to 175 MHz.

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ASI

NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTORDESCRIPTION:\nThe MRF238is Designed for 13.6 V FM Large-Signal Amplifier Applications to 175 MHz.

ASI Semiconductor

Silicon NPN Transistor Color TV, Horizontal Output

Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: • VCEX = 1500V • Safe Operating Area @ 50µs = 20A, 400V

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NTE

Index-Guided High Power AlGaAs Laser Diode

Description The SLD238VL is a high-power, index-guided AlGaAs laser diode. Features • High power • Low current consumption • Small astigmatism • Small package (φ5.6mm) Applications Optical pickup for CD-R/RW

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SONYSony Corporation

索尼

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

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STMICROELECTRONICS

意法半导体