RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source

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MOTOROLA

摩托罗拉

1.0 GHz, 85 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF187SR3\" removed from active portfolio. Possible Replacement Part: \"MRF9085LSR3\".The MRF187SR3 is designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common \n•Guaranteed Performance @ 880 MHz, 26 Volts\n\t   Output Power — 85 Watts (PEP)\n\t   Power Gain — 12 dB\n\t   Efficiency — 30%\n\t   Intermodulation Distortion —  –28 dBc\n•100% Tested for Load Mismatch Stress at all Phase Angles with\n\t5:1 VSWR @ 26 Vdc, 880 MHz, 85 Watts CW\n•Excellent;

恩XP

TO-272

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

TO-272

FREESCALE/飞思卡尔

上传：深圳庞田科技有限公司

TO-272

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司