MRF184

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakesthemidealforlarge–signal,commonsourceamplifierapplicationsin28voltbasestationequipment. •GuaranteedPerformance@945MHz,28Volts

MRF184LSR1

1.0 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET; \n•Guaranteed Performance at 945 MHz, 28 Volts\n Output Power = 60 Watts\n\tPower Gain = 11.5 dB\n\tEfficiency = 53%\n•Characterized with Series Equivalent Large–Signal Impedance Parameters\n•S–Parameter Characterization at High Bias Levels\n•Excellent Thermal Stability\n•100% Tested for Load Mismatch Stress at all Phase Angleswith 5:1 VSWR @ 28 Vdc, 945 MHz, 60 Watts CW\n•Available only in Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.\n•Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ² Nominal.\n\n;

Overview \"MRF184LSR1\" removed from active portfolio. Possible Replacement Part: \"MRF9060MR1\" or \"MRF9060LSR1\".The MRF184LSR1 is designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28 volt base station equipment.

恩XP

MRF184R1

1.0 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET; \n•Guaranteed Performance at 945 MHz, 28 Volts\n\nOutput Power = 60 Watts\nPower Gain = 11.5 dB\nEfficiency = 53%\n\n•Characterized with Series Equivalent Large–Signal Impedance Parameters\n•S–Parameter Characterization at High Bias Levels\n•Excellent Thermal Stability\n•100% Tested for Load Mismatch Stress at all Phase Angleswith 5:1 VSWR @ 28 Vdc, 945 MHz, 60 Watts CW\n•Available only in Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.\n;

Overview \"MRF184R1\" removed from active portfolio. Possible Replacement Part: \"MRF9060LR1\".The MRF184R1 is designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28 volt base station equipment.

恩XP

MRF184R1

N-Channel Enhancement-Mode Lateral MOSFETs

Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,commonsourceamplifierapplicationsin28voltbasestationequipment. •GuaranteedPerformance@945MHz,28Volt

MRF184S

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakesthemidealforlarge–signal,commonsourceamplifierapplicationsin28voltbasestationequipment. •GuaranteedPerformance@945MHz,28Volts

MRF184SR1

N-Channel Enhancement-Mode Lateral MOSFETs

Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,commonsourceamplifierapplicationsin28voltbasestationequipment. •GuaranteedPerformance@945MHz,28Volt

MRF184SR1

1.0 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET; \n•Guaranteed Performance at 945 MHz, 28 Volts\n Output Power = 60 Watts\n\tPower Gain = 11.5 dB\n\tEfficiency = 53%\n•Characterized with Series Equivalent Large–Signal Impedance Parameters\n•S–Parameter Characterization at High Bias Levels\n•Excellent Thermal Stability\n•100% Tested for Load Mismatch Stress at all Phase Angleswith 5:1 VSWR @ 28 Vdc, 945 MHz, 60 Watts CW\n•Available only in Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.\n;

Overview \"MRF184SR1\" removed from active portfolio. Possible Replacement Part: \"MRF9060MR1\" or \"MRF9060LSR1\".The MRF184SR1 is designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applicationsin 28 volt base station equipment.

恩XP