N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volt

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Motorola

摩托罗拉

1.0 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF184SR1\" removed from active portfolio. Possible Replacement Part: \"MRF9060MR1\" or \"MRF9060LSR1\".The MRF184SR1 is designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for large \n•Guaranteed Performance at 945 MHz, 28 Volts\n Output Power = 60 Watts\n\tPower Gain = 11.5 dB\n\tEfficiency = 53%\n•Characterized with Series Equivalent Large–Signal Impedance Parameters\n•S–Parameter Characterization at High Bias Levels\n•Excellent Thermal Stability\n•100% Tested for Loa;

恩XP

高频管

Motorola

摩托罗拉

上传：深圳市金嘉锐电子有限公司

TO-272

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

TO-272

FREESCALE/飞思卡尔

上传：深圳庞田科技有限公司