The RF Line NPN Silicon Power Transistor 6.0W , 1.6GHz, 28V

Designed for 28 V microwave large–signal, common base, Class C, CW amplifier applications in the range 1600 – 1640 MHz • Specified 28 V, 1.6 GHz Class C characteristics Output power = 6 W Minimum gain = 7.4 dB, @ 6 W Minimum efficiency = 40 @ 6 W • Characterized with series equiva

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RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimu

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MOTOROLA

摩托罗拉

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimu

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The RF Line NPN Silicon Power Transistor

文件：176.58 Kbytes 页数：6 Pages

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Bipolar

Designed for 28 V microwave large–signal, common base, Class C, CW amplifier applications in the range 1600 – 1640 MHz. ·Specified 28 V, 1.6 GHz Class C Characteristics;: Output Power = 6 W, Minimum Gain = 7.4 dB, @ 6 W, Minimum Efficiency = 40% @ 6 W\n·Gold Metalized,Emitter Ballasted for Long Lifeand Resistance to Metal Migration\n·Silicon Nitride Passivated\n·Characterized with Series Equivalent Large–Signal P;

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RF POWER TRANSISTOR NPN SILICON

恩XP

Package：395C-01；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：TRANS RF NPN 28V 6W 395C-01

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The RF Line NPN Silicon Power Transistor

文件：176.58 Kbytes 页数：6 Pages

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The RF Line NPN Silicon Power Transistor

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