MRF18085A

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu

MRF18085A

RF Power Field Effect Transistors

DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM-GSMEDGE1805-1880MHz. •GSMandGSMEDGEP

MRF18085A

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs;

MRF18085AL

1805-1880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs; \n•GSM and GSM EDGE Performance, Full Frequency Band (1805–1880 MHz)\nPower Gain: 15 dB (Typ) @ 85 Watts CW\n\tEfficiency: 52% (Typ) @ 85 Watts CW\n\n•Capable of Handling 5:1 VSWR, @ 26 Vdc, 1840 MHz, 85 Watts CW Output Power\n\n•Internally Matched for Ease of Use\n\n•High Gain, High Efficiency and High Linearity\n\n•Integrated ESD Protection\n\n•Designed for Maximum Gain and Insertion Phase Flatness\n\n•Excellent Thermal Stability\n\n•Characterized with Series Equivalent Large–Signal Impedance Parameters\n\n•Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.\n\n•RoHS Compliant\n\n•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.\n\n;

Overview The MRF18085ALR3 and MRF18085ALSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM-GSM EDGE 1805–1880 MHz.\nArchived content is no longer updated and is made available for historical reference only.\n

MRF18085ALR3

RF Power Field Effect Transistors

DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM-GSMEDGE1805-1880MHz. •GSMandGSMEDGEP

MRF18085ALSR3

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu

MRF18085ALSR3

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu

MRF18085ALSR3

RF Power Field Effect Transistors

DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM-GSMEDGE1805-1880MHz. •GSMandGSMEDGEP

MRF18085AR3

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu

MRF18085AR3

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu