LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

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MOTOROLA

摩托罗拉

1.0 GHz, 30 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF182SR1\" removed from active portfolio. Possible Replacement Part: \"MRF9030LSR1\". \n•High Gain, Rugged Device\n•Broadband Performance from HF to 1 GHz\t\n•Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances\n•Available only in Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.;

恩XP

DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER

DESCRIPTION: The MSK 182, 183, 184 and 185 are dual high power monolithic operational amplifiers ideal for use with a wide variety of loads. With operation from either single or dual supplies, they offer excellent design flexibility. Power dissipation is kept to a minimum with a quiescent current

文件：480.97 Kbytes 页数：8 Pages

MSK

DUAL HIGH VOLTAGE

文件：237.43 Kbytes 页数：9 Pages

ANAREN

DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER

DESCRIPTION: The MSK 182, 183, 184 and 185 are dual high power monolithic operational amplifiers ideal for use with a wide variety of loads. With operation from either single or dual supplies, they offer excellent design flexibility. Power dissipation is kept to a minimum with a quiescent current

文件：480.97 Kbytes 页数：8 Pages

MSK