| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RF Power Field Effect Transistor RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5 文件:229.05 Kbytes 页数:12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5 文件:472.35 Kbytes 页数:12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 文件:479.56 Kbytes 页数:16 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 文件:479.56 Kbytes 页数:16 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 文件:277.99 Kbytes 页数:15 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier appli 文件:288.84 Kbytes 页数:16 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common 文件:345.48 Kbytes 页数:16 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Features • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • N Suffix Indicates Lead-Free Terminations. RoHS Compliant. • In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel. 文件:794.12 Kbytes 页数:19 Pages | 恩XP | 恩XP | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12. 文件:757.51 Kbytes 页数:20 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12. 文件:553.44 Kbytes 页数:16 Pages | MOTOROLA 摩托罗拉 | MOTOROLA |
技术参数
- Min Frequency(MHz):
960
- Max Frequency(MHz):
1215
- Bias Voltage(V):
28.0
- Pout(W):
5.00
- Gain(dB):
8.50
- Efficiency(%):
45
- Type:
Bipolar
- Package:
Flange Ceramic Pkg
- Package Category:
Ceramic Flange Mount
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
东芝 |
100 |
原装现货,价格优惠 |
询价 | ||||
FSL |
24+ |
SMD |
5000 |
全现原装公司现货 |
询价 | ||
MOTOROLA |
24+/25+ |
20 |
原装正品现货库存价优 |
询价 | |||
FREESCALE |
24+ |
NI-400S |
250 |
询价 | |||
MRF |
3200 |
原装长期供货! |
询价 | ||||
恩XP |
25+ |
TO-220-3 |
8880 |
原装认准芯泽盛世! |
询价 | ||
恩XP |
1708+ |
? |
11520 |
只做原装进口,假一罚十 |
询价 | ||
恩XP |
24+ |
N/A |
500 |
原装原装原装 |
询价 | ||
M/A-COM |
25+ |
TO-59 |
500 |
原厂原装,价格优势 |
询价 | ||
FREESCALE |
25+ |
SMD |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
询价 |
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