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MRF1511T1

RF Power Field Effect Transistor

RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5

文件:229.05 Kbytes 页数:12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF1511T1

RF Power Field Effect Transistor

RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5

文件:472.35 Kbytes 页数:12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF1513NT1

RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5

文件:479.56 Kbytes 页数:16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF1513T1

RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5

文件:479.56 Kbytes 页数:16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF1517NT1

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

文件:277.99 Kbytes 页数:15 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF1517T1

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier appli

文件:288.84 Kbytes 页数:16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF1517T1

The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common

文件:345.48 Kbytes 页数:16 Pages

MOTOROLA

摩托罗拉

MRF1518NT1

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Features • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • N Suffix Indicates Lead-Free Terminations. RoHS Compliant. • In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.

文件:794.12 Kbytes 页数:19 Pages

恩XP

恩XP

MRF1518NT1

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.

文件:757.51 Kbytes 页数:20 Pages

MOTOROLA

摩托罗拉

MRF1518T1

The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.

文件:553.44 Kbytes 页数:16 Pages

MOTOROLA

摩托罗拉

技术参数

  • Min Frequency(MHz):

    960

  • Max Frequency(MHz):

    1215

  • Bias Voltage(V):

    28.0

  • Pout(W):

    5.00

  • Gain(dB):

    8.50

  • Efficiency(%):

    45

  • Type:

    Bipolar

  • Package:

    Flange Ceramic Pkg

  • Package Category:

    Ceramic Flange Mount

供应商型号品牌批号封装库存备注价格
东芝
100
原装现货,价格优惠
询价
FSL
24+
SMD
5000
全现原装公司现货
询价
MOTOROLA
24+/25+
20
原装正品现货库存价优
询价
FREESCALE
24+
NI-400S
250
询价
MRF
3200
原装长期供货!
询价
恩XP
25+
TO-220-3
8880
原装认准芯泽盛世!
询价
恩XP
1708+
?
11520
只做原装进口,假一罚十
询价
恩XP
24+
N/A
500
原装原装原装
询价
M/A-COM
25+
TO-59
500
原厂原装,价格优势
询价
FREESCALE
25+
SMD
90000
一级代理商进口原装现货、假一罚十价格合理
询价
更多MRF1供应商 更新时间2026-1-18 11:03:00