RF Power LDMOS Transistors

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Features •

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恩XP

RF Power LDMOS Transistors

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Features •

文件：505.8 Kbytes 页数：19 Pages

恩XP

N-Channel Enhancement Mode VHF POWER MOSFET

DESCRIPTION: The ASI MRF138 is a N-Channel enhancement mode MOSFET, intended for use in 28V applications up to 175 MHz. FEATURES: • PG = 17 dB Typ. at 30 W /30MHz • 30:1 Load VSWR Capability • Omnigold™ Metalization System

文件：18.72 Kbytes 页数：1 Pages

ASI

VHP POWER MOSFET

DESCRIPTION: MRF138 is a N-Channel enhancement mode MOSFET, intended for use in 28V applications up to 175 MHz. FEATURES: • PG = 17 dB Typ. at 30 W /30MHz • 30:1 Load VSWR Capability • Omnigold™ Metalization System

文件：84.34 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

The RF MOSFET Line 150W, to 150MHz, 28V

Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode • Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40 (Typ.) • Superior high order IMD • IMD(d3) (150 W PEP):

文件：331.02 Kbytes 页数：10 Pages

MA-COM

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ

文件：163.87 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ

文件：204.27 Kbytes 页数：8 Pages

MACOM

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：205.5 Kbytes 页数：10 Pages

MACOM

RF FIELD-EFFECT POWER TRANSISTOR

DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications.

文件：50 Kbytes 页数：4 Pages

ASI

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：160.63 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉