Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960-1215MHz

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 150 W peak Minimum gain = 7.8 dB • 100 tested for load mismatch at all phase angles with 10:1 VSWR • Indu

文件：191.65 Kbytes 页数：5 Pages

MA-COM

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load

文件：146.71 Kbytes 页数：4 Pages

MACOM

Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

文件：102.1 Kbytes 页数：2 Pages

BEL

VHF POWER MOSFET

DESCRIPTION: The ASI MRF134 is intended for use in 28 VDC large signal Applications, from 2.0 to 400 MHz. FEATURES INCLUDE: • PG = 14 dB Typical at 150 MHz • Omnigold™ Metalization System • Class-A or AB

文件：19.56 Kbytes 页数：1 Pages

ASI

RF Power Field-Effect Transistor

The RF MOSFETLine RF Power Field-Effect Transistor N-Channel Enhancement-Mode ... designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB Eff

文件：94.92 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB

文件：205.18 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V

Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. N–Channel enhancement mode • Guaranteed 28V, 150 MHz performance Output power = 5.0 watts Minimum gain = 11 dB Efficiency = 55 (Typical) • Small– and large–signal characteriz

文件：498.77 Kbytes 页数：12 Pages

MA-COM

VHF POWER MOSFET

DESCRIPTION: The ASI MRF134-39 is intended for use in 28 VDC large signal Applications, from 2.0 to 400 MHz. FEATURES INCLUDE: • PG = 14 dB Typical at 150 MHz • Omnigold™ Metalization System • Class-A or AB

文件：49.54 Kbytes 页数：1 Pages

ASI

RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz.

文件：21.05 Kbytes 页数：1 Pages

ASI

The RF MOSFET Line 15W, to 400MHz, 28V

The RF MOSFET Line 15W, to 400MHz, 28V Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in single-ended configuration N–Channel enhancement mode • Guaranteed 28 volt, 150 MHz performance Output power = 15 watts Narrowband gain = 16 dB (Typ.) Efficien

文件：604.32 Kbytes 页数：12 Pages

MA-COM