The RF Line Microwave Pulse Power Transistor

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters.

• Guaranteed Performance @ 1090 MHz, 50 Vdc

Output Power = 150 Watts Peak

Minimum Gain = 7.8 dB

• 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

• Industry Standard Package

• Nitride Passivated

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

• Internal Input Matching for Broadband Operation

MRF1150MB属于分立半导体产品 > 晶体管 - 双极（BJT）- 射频。Tyco Electronics制造生产的MRF1150MB晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。