MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load M

文件：104.12 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load M

文件：104.12 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Microwave Pulse Power Silicon NPN Transistor 500W (peak), 1025-1150MHz

Microwave Pulse Power Silicon NPN Transistor 500W (peak), 1025–1150MHz Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz Output power = 500 W peak Gain = 8.5 dB min, 9.0 dB (typ.) • 100 t

文件：188.36 Kbytes 页数：6 Pages

MA-COM

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, T ACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatc

文件：142.34 Kbytes 页数：4 Pages

MACOM

Designed for 1025-1150 MHz pulse common base amplifier

Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, T ACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Hermeti

文件：76.36 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960-1215MHz

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 90 W peak Minimum gain = 8.4 dB • 100 tested for load mismatch at all phase angles with 10:1 VSWR • Industry standard

文件：184.55 Kbytes 页数：5 Pages

MA-COM

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

文件：104.63 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch at

文件：127.63 Kbytes 页数：4 Pages

MACOM

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

文件：120.99 Kbytes 页数：4 Pages

MACOM

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

文件：104.63 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉