NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1000MB is Designed for Class A, DME/TACAN Applications up to 1090 MHz. FEATURES: • Class A Operation • PG = 10 dB at 0.2 W/1090 MHz • Omnigold™ Metalization System

文件：16.37 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Ftau = 3.0 Ghz (typ) @ 30

文件：200.36 Kbytes 页数：4 Pages

Microsemi

美高森美

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Ftau = 3.0 Ghz (typ) @ 30

文件：200.36 Kbytes 页数：4 Pages

Microsemi

美高森美

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications.

文件：68.96 Kbytes 页数：1 Pages

ASI

ELECTRICAL SPECIFICATIONS (Tease - 25째C)

ELECTRICAL SPECIFICATIONS (Tease - 25°C)

文件：82.65 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

文件：109.38 Kbytes 页数：6 Pages

Motorola

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

文件：109.38 Kbytes 页数：6 Pages

Motorola

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

文件：109.38 Kbytes 页数：6 Pages

Motorola

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1002MB is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES: • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System

文件：33.36 Kbytes 页数：1 Pages

ASI

Microwave Power Silicon NPN Transistor Microwave Power Silicon NPN Transistor

Description and Applications Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. Features • Guaranteed performance @ 960-1215MHz, 36Vdc • Output power: 30W peak • Minimum gain: 9.0dB min., 9.5dB typ. • 100 tested for load mi

文件：195.44 Kbytes 页数：5 Pages

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