NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1002MB is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES: • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System

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ASI

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

文件：109.38 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

10 AMP SCHOTTKY BARRIER RECTIFIERS

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested

文件：131.97 Kbytes 页数：2 Pages

MICROSEMI

美高森美

100V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：560.71 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体

100V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：530.25 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体