MRF1513N

Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V

The MRF1513NT1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment.; • Specified Performance @ 520 MHz, 12.5 VoltsOutput Power: 3 WattsPower Gain: 15 dBEfficiency: 65%\n• Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive\n• Excellent Thermal Stability\n• Characterized with Series Equivalent Large–Signal Impedance Parameters\n• N Suffix Indicates ;

恩XP

MRF1513N

RF Power Field Effect Transistor

MRF1513NT1

RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET

RFPowerFieldEffectTransistor N-ChannelEnhancement-ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesto520MHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge-signal,commonsourceamplifierapplicationsin7.5

MRF1513NT1

RF Power Field Effect Transistor

MRF1513NT1

RF Power Field Effect Transistor

MRF1513NT1_08

RF Power Field Effect Transistor

MRF1513NT1_0806

RF Power Field Effect Transistor