Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960-1215MHz

Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (ty

文件：171.98 Kbytes 页数：5 Pages

MA-COM

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) • 100 Tested for

文件：98.04 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) • 100 Tested fo

文件：128.12 Kbytes 页数：4 Pages

MACOM

Microwave Long Pulse Power Silicon NPN Transistor

文件：171.98 Kbytes 页数：5 Pages

MA-COM

Bipolar

Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. ·Guaranteed Performance @ 1.215 GHz, 36 Vdc\n·Silicon Nitride Passivated\n·Hermetically Sealer Industry Standard Package\n·100% Tested for Load Mismatch at all Phases Angles with 3:1 VSWR\n·Gain = 7.6 dB min., 8 .5 dB (typ.)\n·Output Power = 120 W Peak\n·Internal Input and Output Matching for Br;

MACOM

Package：355C-02；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 55V 355C-02

MACOM Technology Solutions

Microwave Long Pulse Power Silicon NPN Transistor

文件：171.98 Kbytes 页数：5 Pages

MA-COM