Microwave Pulse Power Silicon NPN Transistor 500W (peak), 1025-1150MHz

Microwave Pulse Power Silicon NPN Transistor 500W (peak), 1025–1150MHz Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz Output power = 500 W peak Gain = 8.5 dB min, 9.0 dB (typ.) • 100 t

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MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, T ACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatc

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Designed for 1025-1150 MHz pulse common base amplifier

Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, T ACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Hermeti

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Microwave Pulse Power Silicon NPN Transistor

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Bipolar

Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. ·Guaranteed Performance @ 1090 MHz - Output Power = 500 W Peak Gain = 8.5 dB min, 9.0 dB (Typ.)\n·Internal Input and Output Matching\n·Gold Metalized, Emitter, Ballested for Long Life and Metal Migration\n·Silicon Nitride Passivated\n·Hermetically Sealed Industry Packaging\n·100% Tested for Load;

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Package：355J-02；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 65V 355J-02

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Microwave Pulse Power Silicon NPN Transistor

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Microwave Pulse Power Silicon NPN Transistor

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