The RF MOSFET Line 30W, to 400MHz, 28V

The RF MOSFET Line 30W, to 400MHz, 28V Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode • Guaranteed 28 volt, 150 MHz performance Output power = 30 Watts Broadband

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MA-COM

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance Output Power =

文件：221.24 Kbytes 页数：9 Pages

MACOM

RF Power Field-Effect Transistors

The RF TMOS Line RF Power Field-EffectTransistors N-Channel Enhancement-Mode TMOS . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136

文件：80.1 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

The RF MOSFET Line

文件：412.47 Kbytes 页数：10 Pages

MA-COM

The RF MOSFET Line

文件：412.47 Kbytes 页数：10 Pages

MA-COM

The RF MOSFET Line

文件：903.5 Kbytes 页数：11 Pages

MA-COM

The RF MOSFET Line 30W, to 400MHz, 28V

Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in either single-ended or push-pull configuration. ·N–Channel Enhancement Mode\n·100%Test for Load Mismatch at all Phase Angels with 30:1 VSWR\n·Small and Large Signal characterization\n·Guaranteed 28 Volt, 150 MHz Performance - Output Power = 30 Watts Broadband Gain = 14 dB (Typ.) Efficiency = 54% (Typ.)\n·Facilitates Manual Gain Control AL;

MACOM

Trans RF MOSFET N-CH 65V 5A 5-Pin Case 319B-02

NJS

Package：319B-02；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 400MHZ 319B-02

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