The RF MOSFET Line

RF Power

Field-Effect Transistors

N-Channel Enhancement-Mode MOSFET

Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.

• Guaranteed 28 Volt, 150 MHz Performance

Output Power = 30 Watts

Broadband Gain = 14 dB (Typ)

Efficiency = 54 (Typical)

• Small–Signal and Large–Signal

Characterization

• 100 Tested For Load

Mismatch At All Phase

Angles With 30:1 VSWR

• Space Saving Package For

Push–Pull Circuit

Applications

• Excellent Thermal Stability,

Ideally Suited For Class A

Operation

• Facilitates Manual Gain

Control, ALC and

Modulation Techniques

MRF136Y属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。Tyco Electronics制造生产的MRF136Y晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。