MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load M

文件：104.12 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Water-proof Type

文件：1.1138 Mbytes 页数：5 Pages

ALPS

阿尔卑斯

-30A, -100V P CHANNEL MOSFET

DESCRIPTION SVT10500PD is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high ava

文件：377.82 Kbytes 页数：9 Pages

SILAN

士兰微

-30A, -100V P CHANNEL MOSFET

DESCRIPTION SVT10500PD is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high ava

文件：377.82 Kbytes 页数：9 Pages

SILAN

士兰微