RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF137 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Output and Driver Stage Applications up to 400 MHz.

文件：21.02 Kbytes 页数：1 Pages

ASI

The RF MOSFET Line 30W, to 400MHz, 28V

Designed for wideband large signal output and drive stages up to 400 MHz range. N–Channel enhancement mode • Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency — 60 (Typical) • Small– and large–signal characterization • Typical performance a

文件：437.55 Kbytes 页数：11 Pages

MA-COM

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) •

文件：196.48 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) •

文件：213.38 Kbytes 页数：9 Pages

MACOM

The RF MOSFET Line 30W, to 400MHz, 28V

文件：404.75 Kbytes 页数：11 Pages

MA-COM

The RF MOSFET Line 30W, to 400MHz, 28V

Designed for wideband large signal output and drive stages up to 400 MHz range. ·Guaranteed 28 V, 150 MHzPerformance - Output power = 30 W Minimum Gain = 13 dB Efficiency — 60% (Typ.)\n·100% Test for Load Mistmatch at all Phase Angelswith 30:1 VSWR\n·Typical Performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain\n·Small andLarge Signal Characterization\n·Excellent Th;

MACOM

Package：211-07；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 400MHZ 211-07

MACOM Technology Solutions

RF Power LDMOS Transistors

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Features •

文件：505.8 Kbytes 页数：19 Pages

恩XP

RF Power LDMOS Transistors

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Features •

文件：505.8 Kbytes 页数：19 Pages

恩XP

The RF MOSFET Line

文件：404.75 Kbytes 页数：11 Pages

MA-COM