MRF137分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

. . . designed for wideband large–signal output and driver stages up to 400 MHz range.

• Guaranteed 28 Volt, 150 MHz Performance

Output Power = 30 Watts

Minimum Gain = 13 dB

Efficiency — 60 (Typical)

• Small–Signal and Large–Signal Characterization

• Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain

• 100 Tested For Load Mismatch At All Phase Angles With 30:1 VSWR

• Low Noise Figure — 1.5 dB (Typ) at 1.0 A, 150 MHz

• Excellent Thermal Stability, Ideally Suited For Class A Operation

• Facilitates Manual Gain Control, ALC and Modulation Techniques