N-Channel Enhancement Mode VHF POWER MOSFET

DESCRIPTION: The ASI MRF148A is Designed for General Purpose Class B Power Amplifier Applications up to 175 MHz. FEATURES: • PG = 15 dB Typ. at 30 W /175 MHz • ηD = 50 Typ. at 30 W /30 MHz • Omnigold™ Metalization System

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ASI

Linear RF Power FET 30W, to 175MHz, 50V

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. • Superior high order IMD IMD(d3) (30W PEP): –35 dB (Typ.) IMD(d11) (30W PEP): –60 dB (Typ.) • Specified 50V, 30MHz characteristics: Output power: 30W Gain: 18dB (Typ.)

文件：285.74 Kbytes 页数：7 Pages

MA-COM

Designed for power amplifier applications in industrial

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. • Superior high order IMD IMD(d3) (SOW PEP): -35 dB (Typ.) IMD(d11) (30W PEP): -60 dB (Typ.) • Specified 50V, 30MHz characteristics: Output power: SOW Gain: 18dB (Typ.)

文件：84.36 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Linear RF Power FET 30W, to 175MHz, 50V

文件：285.74 Kbytes 页数：7 Pages

MA-COM

Linear RF Power FET

文件：285.74 Kbytes 页数：7 Pages

MA-COM

Linear RF Power FET

文件：711.88 Kbytes 页数：8 Pages

MA-COM

Linear RF Power MOSFET 30W, to 175MHz, 50V

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. ·Superior High Order IMD - IMD(d11) (30W PEP): –60 dB (Typ.), IMD(d3) (30W PEP): –35 dB (Typ.)\n·100%Test for Load Mismatch at allPhase Angel with 30:1 VSWR\n·Lower Reverse Transfer Capacitance (3.0 pF typ.)\n·Specified 50V, 30MHz characteristics:18dB (Typ.), Output power: 30W, Efficiency: 40

MACOM

N-Channel Enhancement Mode VHF POWER MOSFET

ASI Semiconductor

Trans RF MOSFET N-CH 120V 6A 4-Pin Case 211-07

NJS

Package：211-07；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 120V 175MHZ 211-07

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