The RF MOSFET Line 150W, to 150MHz, 28V

Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode • Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40 (Typ.) • Superior high order IMD • IMD(d3) (150 W PEP):

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MA-COM

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ

文件：163.87 Kbytes 页数：6 Pages

Motorola

摩托罗拉

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ

文件：204.27 Kbytes 页数：8 Pages

MACOM

The RF MOSFET Line 150W, to 150MHz, 28V

文件：331.02 Kbytes 页数：10 Pages

MA-COM

The RF MOSFET Line 30W, to 400MHz, 28V

Designed primarily for linear large–signal output stages up to Product Image 150 MHz frequency range. ·N–Channel Enhancement Mode\n·IMD(d11) (150 W PEP): –60 dB (Typ.)\n·Superior High Order IMD\n·Specified 28 Volts, 30 MHz Characteristics - Output power = 150 watts, Power gain = 15 dB (Typ.), Efficiency = 40% (Typ.)\n·100%Test for Load Mismatch at all Phase with 30:1 VSWR\n·IMD(d3) (150 W PE;

MACOM

Package：211-11，2 型；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 150MHZ 211-11

MACOM Technology Solutions

MRF140_15

文件：331.02 Kbytes 页数：10 Pages

MA-COM

The RF MOSFET Line

文件：802.05 Kbytes 页数：11 Pages

MA-COM