Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960-1215MHz

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 90 W peak Minimum gain = 8.4 dB • 100 tested for load mismatch at all phase angles with 10:1 VSWR • Industry standard

文件：184.55 Kbytes 页数：5 Pages

MA-COM

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

文件：104.63 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch at

文件：127.63 Kbytes 页数：4 Pages

MACOM

90 W, microwave power transistor NPN silicon

MACOM