SILICON RF POWER MOSFET

DESCRIPTION: The MRF150is an N-Channel Enhancement-Mode MOS Broadband RF Ppwer Transistor Designed for Wideband Large Signal Amplifier Applications From 2.0 to 150 MHz.

文件：19.91 Kbytes 页数：1 Pages

ASI

RF Power FET 150W, to 150MHz, 50V

Designed primarily for linear large-signal output stages up to 150 MHz • Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.) • Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45 (

文件：285.58 Kbytes 页数：9 Pages

MA-COM

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ)

文件：148.54 Kbytes 页数：6 Pages

Motorola

摩托罗拉

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (

文件：183.53 Kbytes 页数：8 Pages

MACOM

RF Power FET 150W, to 150MHz, 50V

文件：285.58 Kbytes 页数：9 Pages

MA-COM

150 W, to 150 MHz N–CHANNEL MOS LINEAR RF POWERFET

The RF MOSFET Line\nRF Power Field-Effect Transistor\nN–Channel Enhancement–ModeDesigned primarily for linear large–signal output stages up to 150 MHz frequency range.\n• Specified 50 Volts, 30 MHz Characteristics\n  Output Power = 150 Watts\n  Power Gain = 17 dB (Typ)\n  Efficiency = 45% (Typ)\

恩XP

SILICON RF POWER MOSFET

DESCRIPTION:\nThe MRF150is an N-Channel Enhancement-Mode MOS Broadband RF Ppwer Transistor Designed for\nWideband Large Signal Amplifier Applications From 2.0 to 150 MHz.

ASI Semiconductor

RF MOSFET

NJS

Package：211-11，2 型；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 125V 150MHZ 211-11

MACOM Technology Solutions

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Herme

文件：103.24 Kbytes 页数：4 Pages

Motorola

摩托罗拉