MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Herme

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MOTOROLA

摩托罗拉

500 W (PEAK), 1025– 1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line\nMicrowave Pulse Power Transistor\n\nDesignedfor 1025–1150 MHz pulse commonbase amplifier applications such as DME.\n\n• Guaranteed Performance @ 1090 MHz\n  Output Power = 500 Watts Peak\n  Gain = 5.2 dB Min\n• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR\n• Herm

恩XP

Diode Switching 15KV 0.5A 3-Pin

NJS

新泽西半导体

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：93.69 Kbytes 页数：8 Pages

NEC

瑞萨

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：93.69 Kbytes 页数：8 Pages

NEC

瑞萨

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：93.69 Kbytes 页数：8 Pages

NEC

瑞萨