N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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COMPOUND FIELD EFFECT POWER TRANSISTOR

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The mPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance ID(DC) = ±3 A R

文件：238.89 Kbytes 页数：10 Pages

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COMPOUND FIELD EFFECT POWER TRANSISTOR

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The mPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance ID(DC) = ±3 A R

文件：238.89 Kbytes 页数：10 Pages

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N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：93.69 Kbytes 页数：8 Pages

NEC

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N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

DESCRIPTION\nThe µPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for\nsolenoid, motor and lamp driver.FEATURES\n• 4 V driving is possible\n• Large Current and Low On-state Resistance\n  ID(DC)= ±3 A\n  RDS(on)1 ≤0.18 ΩMAX. (VGS= 10 V, ID= 2 A)\n  RDS(on • 4 V driving is possible\n• Large Current and Low On-state Resistance\n  ID(DC)= ±3 A\n  RDS(on)1 ≤0.18 ΩMAX. (VGS= 10 V, ID= 2 A)\n  RDS(on)2 ≤0.24 ΩMAX. (VGS= 4 V, ID= 2 A)\n• Low Input Capacitance Ciss = 200 pF TYP.\n• Surge Absorber, built in;

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