SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management of notebook computers. FEATURES • Low On-Resistance RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 mΩ Max. (VGS = 4 V, ID = 3.5 A) • Low Input Capacitanc

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NEC

瑞萨

MOS FIELD EFFECT POWER TRANSISTORS

DESCRIPTION The μ PA1700A is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management of notebook computers. FEATURES • Low On-Resistance RDS(on)1 = 27mΩ MAX. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50mΩ MAX. (VGS = 4 V, ID = 3.5 A) • Low Input Capacitance Ciss

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RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞萨

Low Pass Filter DC to 1700 MHz

Features • low cost • small size • 7 sections • temperature stable • patent pending Applications • harmonic rejection • transmitters/receivers • lab use

文件：88.95 Kbytes 页数：1 Pages

MINI

Hall Effect Base Linear Current Sensor

文件：114.37 Kbytes 页数：3 Pages

WINSON

育升半导体

P-Channel Enhancement Mode MOSFET General Purpose Amplifier

FEATURES • Low ON-Resistance • High Gain • Low Noise Voltage • High Input Impedance • Low Leakage

文件：21.19 Kbytes 页数：2 Pages

CALOGIC