SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF

文件：79.46 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power

文件：234.15 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF

文件：79.46 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power

文件：234.15 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-Channel 100-V (D-S) MOSFET

文件：1.71381 Mbytes 页数：8 Pages

VBSEMI

微碧半导体