-30A, -100V P CHANNEL MOSFET

DESCRIPTION SVT10500PD is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high ava

文件：377.82 Kbytes 页数：9 Pages

SILAN

士兰微

丝印：10500PD；Package：TO-252-2L；-30A, -100V P CHANNEL MOSFET

DESCRIPTION SVT10500PD is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high ava

文件：377.82 Kbytes 页数：9 Pages

SILAN

士兰微

低压MOS功率管

SVT10500PD  P沟道增强型功率MOS场效应晶体管采用士兰的LVMOS 工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于不间断电源及逆变器系统的电源管理领域。\n\n • -30A，-100V，RDS(on)（典型值）=35mW@VGS=-10V\n• 低栅极电荷量\n• 低反向传输电容\n• 开关速度快\n• 提升了dv/dt 能力\n• 100%雪崩测试\n• 无铅管脚镀层\n• 符合RoHS环保标准;

Silan

士兰微

PRODUCT SPECIFICATION

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JOKARI

ISDN S-Interface Transformers

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RHOMBUS-IND

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RHOMBUS-IND