MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) • 100 Tested fo

文件：128.12 Kbytes 页数：4 Pages

MACOM

Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960-1215MHz

Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (ty

文件：171.98 Kbytes 页数：5 Pages

MA-COM

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) • 100 Tested for

文件：98.04 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) • 100 Tested for Load M

文件：90.29 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Microwave Pulse Power Silicon NPN Transistor 150W (peak), 1025-1150MHz

Microwave Pulse Power Silicon NPN Transistor 150W (peak), 1025–1150MHz Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz Output power = 150 W Peak Gain = 9.5 dB min, 10.0 dB (typ.) • 100

文件：187.18 Kbytes 页数：6 Pages

MA-COM

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) • 100 Tested for Load M

文件：139.97 Kbytes 页数：4 Pages

MACOM

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

文件：110.64 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

文件：110.64 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

文件：110.64 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

UHF POWER TRANSISTOR

The RF Line UHF Power Transistor . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers • Specified 25 Volt, 900 MHz Characteristics: Output Power — 3.0 Watts Power Gain — 7.5 dB Min, Class AB •

文件：54.5 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉