NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1090MB is Designed for High Peak power & low duty cycle, IFF, DME, and TACAN Applications. FEATURES: • Internal Input Matching Network • PG = 8.4 dB at 90 W/1150 MHz • Omnigold™ Metalization System

文件：17.75 Kbytes 页数：1 Pages

ASI

Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960-1215MHz

Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 90 W Peak Minimum gain = 8.4 dB • 100 tested f

文件：185.79 Kbytes 页数：5 Pages

MA-COM

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

文件：104.63 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

文件：120.99 Kbytes 页数：4 Pages

MACOM

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch at

文件：127.63 Kbytes 页数：4 Pages

MACOM

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch at

文件：150.92 Kbytes 页数：4 Pages

MACOM

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

文件：128.199 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉

Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960-1215MHz

Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960–1215MHz Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 150 W peak Minimum gain = 7.8 dB • 100 tested

文件：196.12 Kbytes 页数：5 Pages

MA-COM

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

文件：128.199 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1150MB is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: • Class B and C Operation • Common Base • PG = 7.8 dB at 150 W/1090 MHz • Omnigold™ Metalization System

文件：19.41 Kbytes 页数：2 Pages

ASI