Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V

RF Power transistors, MMRF1008H, MMRF1008HS and MMRF1008GH are designed for applications operating at frequencies from 900 and 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME. • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%Power Gain: 20.3 dBDrain Efficiency: 65.5%\n• Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power\n• Typical Broadband Performan;

恩XP

RF Power Field Effect Transistors

文件：1.19691 Mbytes 页数：19 Pages

恩XP

10A BRIDGE RECTIFIER

Features ● Diffused Junction ● High Current Capability ● High Case Dielectric Strength ● High Surge Current Capability ● Ideal for Printed Circuit Board Application ● Plastic Material has UL Flammability 94V-0 ● Recognized File # E157705

文件：35.21 Kbytes 页数：3 Pages

WTE

Won-Top Electronics

RF LDMOS Wideband Integrated Power Amplifiers

文件：594.33 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

PRI TRANSFORMERS Reinforced Insulation

文件：51.21 Kbytes 页数：1 Pages

XFMRS

QUICK-FIT TERMINALS

[KEYSTONE] AVAILABLE IN BRASS OR STEEL TABS • Ideal for rugged multi-insertion applications • Pre-assembled header reduces PC assembly costs • Increases PC board retention strength • Keeps terminals perpendicular • Maintains position for wave soldering

文件：515.97 Kbytes 页数：1 Pages

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