RF Power LDMOS Transistors

文件：473.24 Kbytes 页数：17 Pages

恩XP

RF Power LDMOS Transistors

文件：473.24 Kbytes 页数：17 Pages

恩XP

1200-1400 MHz, 1000 W峰值, 52 V Airfast®射频功率LDMOS晶体管

These RF power devices, MMRF1314H, MMRF1314HS and MMRF1314GS, are designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The devices are suitable for use in pulse applications and are ideal for use in high power military and commercial L-Band radar applications. • Internally input and output matched for broadband operation and ease of use\n• Device can be used in a single-ended, push-pull or quadrature configuration\n• Qualified up to a maximum of 52 VDD operation\n• High ruggedness, handles > 20:1 VSWR\n• Integrated ESD protection with greater negative gat;

恩XP

恩智浦

RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V

These RF power devices, MMRF1314H, MMRF1314HS and MMRF1314GS, are designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The devices are suitable for use in pulse applications and are ideal for use in high power military and commercial L-Band radar applications. • Internally input and output matched for broadband operation and ease of use\n• Device can be used in a single-ended, push-pull or quadrature configuration\n• Qualified up to a maximum of 52 VDD operation\n• High ruggedness, handles > 20:1 VSWR\n• Integrated ESD protection with greater negative gat;

恩XP

恩智浦