MMRF1318N

10-600 MHz, 300 W CW, 50 V Broadband RF Power LDMOS Transistor; • Characterized with series equivalent large-signal impedance parameters\n• Qualified for operation at 50 Vdc\n• Integrated ESD protection\n• Greater negative gate-source voltage range for improved Class C operation\n• RoHS Compliant\n• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13-inch Reel.\n;

The MMRF1318NR1 is designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in military and commercial CW and pulse applications, such as radio communications and radar.

恩XP

MMRF1318N

RF Power LDMOS Transistor

ETC

MMRF1318NR1

RF Power LDMOS Transistor

ETC

MT1318A-UR

5mmRedUltraBrightEmitter

Features LowCurrentRequirements ICCompatible HighLightOutput ReliableandRugged

MT1318-RG

MarktechStandard5mmWhiteDiff.&WaterClearLEDs

FEATURES •Excellenton/offcontrasts •Choiceofwhitediffusedorwaterclearlens •Othercolors/materialsavailable •Optionofstandoffsorhardleads •Canbepackagedontapeinareelorinabox

MT1318-UR

5mmRedUltraBrightEmitter

Features LowCurrentRequirements HighLightOutput ReliableandRugged ICCompatible