RF Power LDMOS Transistors

文件：605.04 Kbytes 页数：13 Pages

恩XP

RF Power LDMOS Transistors

文件：605.04 Kbytes 页数：13 Pages

恩XP

RF Power LDMOS Transistors

文件：605.04 Kbytes 页数：13 Pages

恩XP

1.8-600 MHz, 600 W CW, 50 V Broadband RF Power MOSFETs

These high ruggedness devices, MMRF1308HR5 and MMRF1308HSR5, are designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing w • Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Device can be used Single-Ended or in a Push-Pull Configuration\n• Qualified Up to a Maximum of 50 VDD Operation\n• Characterized from 30 V to 50 V for Extended Power Range\n• Suitable for Linear Application with Appropriate B;

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恩智浦

Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V

These high ruggedness devices, MMRF1308HR5 and MMRF1308HSR5, are designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing w • Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Device can be used Single-Ended or in a Push-Pull Configuration\n• Qualified Up to a Maximum of 50 VDD Operation\n• Characterized from 30 V to 50 V for Extended Power Range\n• Suitable for Linear Application with Appropriate B;

恩XP

恩智浦