Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V

These high ruggedness devices, MMRF1308HR5 and MMRF1308HSR5, are designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing w • Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Device can be used Single-Ended or in a Push-Pull Configuration\n• Qualified Up to a Maximum of 50 VDD Operation\n• Characterized from 30 V to 50 V for Extended Power Range\n• Suitable for Linear Application with Appropriate B;

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ONSEMI

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文件：201.57 Kbytes 页数：16 Pages

ONSEMI

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