MMRF1315N

500-1000 MHz, 60 W CW, 28 V Broadband RF Power LDMOS Transistor; • Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg.,IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.Power Gain: 21.1 dBDrain Efficiency: 33%ACPR @ 750 kHz Offset: –45.7 dBc in 30 kHz Bandwidth\n• Capable of Handling 10:1 VSWR @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness\nGSM EDGE Application• Typical GSM EDGE Performance: VDD = 28 Vdc, IDQ = 500 mA,Pout = 21 W Avg., Full Frequency Band (920-960 MHz)Power Gain: 20 dBDrain Efficiency: 46%Spectral Regrowth @ 400 kHz Offset = –62 dBcSpectral Regrowth @ 600 kHz Offset = –78 dBcEVM: 1.5% rms\nGSM Application• Typical GSM Performance: VDD = 28 Vdc, IDQ = 500 mA, Pout = 60 W, Full Frequency Band (920-960 MHz)Power Gain: 20 dBDrain Efficiency: 63%\n• Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Integrated ESD Protection\n• 225°C Capable Plastic Package\n• RoHS Compliant\n• In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.\n;

The MMRF1315NR1 is designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device are ideal for large-signal, common-source amplifier applications in 28 V RF systems.

恩XP

MMRF1315N

RF Power LDMOS Transistor

ETC

MMRF1315NR1

RF Power LDMOS Transistor

ETC

MWDMG1315

Micro-OpticWDM

NTE1315

IntegratedCircuitModule−2Power,2ChannelAFPowerAmplifier,35WMin

IntegratedCircuitModule−2Power,2ChannelAFPowerAmplifier,35WMin

PA1315NL

PowerBeads-PA131xNLSeriesCoupledInductors