RF Power LDMOS Transistor

文件：838.66 Kbytes 页数：15 Pages

恩XP

RF Power LDMOS Transistor

文件：838.66 Kbytes 页数：15 Pages

恩XP

500-1000 MHz, 60 W CW, 28 V Broadband RF Power LDMOS Transistor

The MMRF1315NR1 is designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device are ideal for large-signal, common-source amplifier applications in 28 V RF systems. • Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg.,IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.Power Gain: 21.1 dBDrain Efficiency: 33%ACPR @ 750 kHz Off;

恩XP

PCB Terminal Block

3.81 mm Pin Spacing • Board Mount PCB • 12A Current Rating • Height 12.6mm • Modular / stackable, no dovetail version

文件：312.2 Kbytes 页数：1 Pages

ALTECH

Micro-Optic WDM

文件：170.37 Kbytes 页数：2 Pages

OPLINK

Integrated Circuit Module − 2 Power, 2 Channel AF Power Amplifier, 35W Min

Integrated Circuit Module − 2 Power, 2 Channel AF Power Amplifier, 35W Min

文件：79.72 Kbytes 页数：2 Pages

NTE