1030-1090 MHz, 250 W Peak, 50 V RF LDMOS Integrated Power Amplifiers

The MMRF2010N and MMRF2010GN are 2-stage RFICs designed for IFF transponder applications operating from 1030 to 1090 MHz. These devices are suitable for use in pulse applications such as IFF and secondary radar transponders. Features• Characterized over 1030-1090 MHz\n• On-chip input (50 Ohm) and interstage matching\n• Single ended\n• Integrated ESD protection\n• Low thermal resistance\n• Integrated quiescent current temperature compensation with enable/disable function\n• RoHS Compliant\nTypical Applications• Driver PA;

恩XP

恩智浦

RF LDMOS Wideband Integrated Power Amplifiers

文件：807.18 Kbytes 页数：23 Pages

恩XP

10 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors

10 kPa On-Chip Temperature Compensated and Calibrated Silicon Pressure Sensors The MPX2010 series silicon piezoresistive pressure sensors provide a very accurate and linear voltage output directly proportional to the applied pressure. These sensors house a single monolithic silicon die with t

文件：358.45 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

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10 kPa On-Chip Temperature Compensated and Calibrated Silicon Pressure Sensors

文件：352.83 Kbytes 页数：17 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Washing Appliance Sensor Selection

文件：161.72 Kbytes 页数：6 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体