30-2200 MHz, 125 W CW, 50 V RF Power GaN Transistor

The MMRF5017HS 125 W RF power GaN transistor is capable of broadband operation from 30 to 2200 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and broadband RF applications.\nThis part is characte • Advanced GaN on SiC, offering high power density\n• Decade bandwidth performance\n• Input matched for extended wideband performance\n• High ruggedness: > 10:1 VSWR\n• RoHS compliant\nTypical Applications• Ideal for military end-use applications, including the following: • Narrowband and multi-octa;

恩XP

恩智浦

RF Power GaN Transistor

文件：177.63 Kbytes 页数：10 Pages

恩XP

3V-.5.5V, 1A ??5A Current Limit Switch with Over-Voltage Clamp and Reverse Blocking in 2mmx3mm QFN Package

文件：735.43 Kbytes 页数：17 Pages

MPS

美国芯源

3V-.5.5V, 1A ??5A Current Limit Switch with Over-Voltage Clamp and Reverse Blocking in 2mmx3mm QFN Package

文件：735.43 Kbytes 页数：17 Pages

MPS

美国芯源

Compact modular design with DIN rail mounting

文件：440.88 Kbytes 页数：29 Pages

EATON

伊顿