RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V

These 1300 W RF power transistors, MMRF1317H and MMRF1317HS, are designed for applications operating at frequencies between 1020 and 1100 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and secondary surveillance radars. • Internally input and output matched for broadband operation and ease of use\n• Device can be used in a single-ended, push-pull, or quadrature configuration\n• High ruggedness,handles > 10:1 VSWR\n• Integrated ESD protection with greater negative voltage range for improved Class C operation and gat;

恩XP

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RF Power LDMOS Transistors

文件：851.9 Kbytes 页数：17 Pages

恩XP

Integrated Circuit Module, 2 Power, 2 Channel, AF Power Amplifier, 50W Min.

Features: ● Muting Circuit ● Reduced Heat Sink due to Case Temperature Dissipation up to +125°C

文件：23.33 Kbytes 页数：2 Pages

NTE

Dual-Mode ANT??and Wireless Bluetooth짰 ConnectivityPiDesign

文件：831.74 Kbytes 页数：2 Pages

Panasonic

松下

BLUETOOTH짰 LOW ENERGY RF MODULES

文件：947.79 Kbytes 页数：2 Pages

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松下