1-2700 MHz, 125 W连续波，50 V宽带射频功率GaN on SiC晶体管

The MMRF5014H 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.\nThis part is characterized • Decade bandwidth performance\n• Low thermal resistance\n• Advanced GaN on SiC, offering high power density\n• Input matched for extended wideband performance\n• High ruggedness: > 20:1 VSWR\n• RoHS compliant\n• These products are included in our product longevity program with assured supply for a ;

恩XP

RF Power GaN Transistor

文件：776.02 Kbytes 页数：18 Pages

恩XP

12 V, 5 A, Programmable Current-Limit Switch with Over-Volatge Clamp and Slew-Rate Control in TSOT23-8

文件：520.48 Kbytes 页数：14 Pages

MPS

美国芯源

12 V, 5 A, Programmable Current-Limit Switch with Over-Volatge Clamp and Slew-Rate Control in TSOT23-8

文件：520.48 Kbytes 页数：14 Pages

MPS

美国芯源

Glass Passivated Three Phase Bridge Rectifiers

文件：180.82 Kbytes 页数：3 Pages

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