RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V

The MMRF2007N wideband integrated circuit is designed with on-chip pre-matching that makes it usable from 136 to 940 MHz. This multi-stage structure is rated for 26 to 32 V operation, has a 2-stage design with off-chip matching for the input and covers all typical modulation formats. This device is • Characterized with series equivalent large-signal impedance parameters and common source S-parameters\n• On-chip prematching. On-chip stabilization.\n• Integrated quiescent current temperature compensation with enable/disable function\n• Integrated ESD protection\n• RoHS compliant;

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RF LDMOS Wideband Integrated Power Amplifiers

文件：403.1 Kbytes 页数：17 Pages

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Reed based magnetic proximity sensor in aluminum threaded housing

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3A, 1.3V??.0V DDR Memory Termination Regulator

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美国芯源