RF LDMOS Wideband Integrated Power Amplifier

文件：804.96 Kbytes 页数：19 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifier

文件：804.96 Kbytes 页数：19 Pages

恩XP

2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifier

The MMRF2004NBR1 wideband integrated circuit is designed with on-chip matching that makes it usable from 2300 to 2700 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. • Typical WiMAX Performance: VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHzChannel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.Power Gain: 28.5 dBPower Added Efficiency: 17%Device Output Signal PAR: 9 ;

恩XP

Dual, Low Noise, High PSRR 200mA Linear Regulator

文件：353.77 Kbytes 页数：9 Pages

MPS

美国芯源

Dual, Low Noise, High PSRR 200mA Linear Regulator

文件：353.77 Kbytes 页数：9 Pages

MPS

美国芯源

Dual, Low Noise, High PSRR 200mA Linear Regulator

文件：353.77 Kbytes 页数：9 Pages

MPS

美国芯源